Datasheet Details
| Part number | AON6980 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 481.92 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
 AON6980 Datasheet
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| Part number | AON6980 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 481.92 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
AON6980 Datasheet
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• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Top View DFN5X6B Bottom View 100% UIS Tested 100% Rg Tested Top View Q1 30V 28A < 6.8mΩ < 10.3mΩ Q2 30V 36A < 3.8mΩ < 4.9mΩ Bottom View PIN1 PIN1 Orderable Part Number AON6980 Package Type DFN 5x6B Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C VGS ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 28 22 111 18 14 51 13 36 23.5 9.4 3.5 2.2 -55 to 150 Max Q2 30 ±12 36 28 144 27 21 60 18 36 32 13 4.1 2.6 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 29 55 4.3 Typ Q2 25 50 3 Max Q1 35 66 5.3 Max Q2 30 60 3.8 Units °C/W °C/W °C/W Rev.1.0: January 2014 www.aosmd.com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250uA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance V
AON6980 30V Dual Asymmetric N-Channel AlphaMOS General.
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|---|---|
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| AON6908A | N-Channel MOSFET |
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