Datasheet Details
| Part number | AON6996 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 490.04 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AON6996 Download (PDF) |
|
|
| Part number | AON6996 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 490.04 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AON6996 Download (PDF) |
|
|
|
• Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial Top View DFN5X6D Punch Bottom View 100% UIS Tested 100% Rg Tested Top View Q1 30V 50A < 5.2mΩ < 8.6mΩ Q2 30V 60A < 3.9mΩ < 5mΩ Bottom View PIN1 Orderable Part Number AON6996 PIN1 Package Type DFN 5x6D Q2: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH C VGS ID IDM IDSM IAS EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 30 ±20 50 31 100 19 15 38 7 36 21 8.3 3.1 2 -55 to 150 Max Q2 30 ±12 60 38 120 23 18 48 12 36 22 8.6 3.1 2 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 30 50 4.6 Typ Q2 30 50 4.4 Max Q1 40 65 6 Max Q2 40 65 5.8 Units °C/W °C/W °C/W Rev.2.0: June 2015 www.aosmd.com Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V,
AON6996 30V Dual Asymmetric N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6992 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6994 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6998 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6906A | N-Channel MOSFET |
| AON6908 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6908A | N-Channel MOSFET |
| AON6910A | N-Channel MOSFET |
| AON6912 | 30V Dual Asymmetric N-Channel MOSFET |
| AON6912A | 30V Dual Asymmetric N-Channel MOSFET |
| AON6918 | N-Channel MOSFET |