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AON7400A Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON7400A 30V N-Channel MOSFET General.

General Description

Product Summary • The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is suitable for use as a high side switch in SMPS and general purpose applications.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) • RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested 30V 40A < 7.5mW < 10.5mW DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 40 28 100 15 12 27 36 25 10 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 4.2 Max 40 75 5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 4.1: October 2023 www.aosmd.com Page 1 of 6 AON7400A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.5 1.97 2.5 V ID(ON) On state drain current VGS=10V, VDS=5V 100 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 6.2 7.5 9.4 11.3 mW VGS=4.5V, ID=20A 8.4 10.5 mW gFS Forward Transconductance VDS=5V, ID=20A 55 S V

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AON7400A Distributor