Datasheet Details
| Part number | AON7404G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 344.17 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON7404G-AlphaOmegaSemiconductors.pdf |
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Overview: AON7404G 20V N-Channel MOSFET General.
| Part number | AON7404G |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 344.17 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON7404G-AlphaOmegaSemiconductors.pdf |
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• Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested 20V 20A < 5.3mΩ < 6.8mΩ DFN 3x3_EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G D S Orderable Part Number AON7404G Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current G Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 20 20 80 20 20 40 80 28 11 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 20 45 3.7 Max 25 55 4.5 Units °C/W °C/W °C/W Rev.1.0: August 2017 www.aosmd.com Page 1 of 6 AON7404G Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS, ID=250mA VGS=4.5V, ID=20A Static Drain-Source On-Resistance VGS=2.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Revers
| Part Number | Description |
|---|---|
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