Datasheet Details
| Part number | AON7406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 449.94 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7406_AlphaOmegaSemiconductors.pdf |
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Overview: AON7406 30V N-Channel MOSFET General.
| Part number | AON7406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 449.94 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON7406_AlphaOmegaSemiconductors.pdf |
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Product Summary • The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in SMPS and general purpose applications.
• RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 25A < 17mW < 23mW HBM Class 2 DFN 3x3A Top View Bottom View Top View S D S D S D G G D Pin 1 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range VDS VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 25 15 50 9 7 19 18 15.5 6 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 6.6 Max 40 75 8 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.6.1: October 2023 www.aosmd.com Page 1 of 6 AON7406 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 10 mA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 50 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9A TJ=125°C 14 17 20 24 mW VGS=4.5V, ID=8A 18 23 mW gFS Forward Transconductance VDS=5V, ID=9A 40 S VSD Diode Forward Voltage
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