Datasheet Details
| Part number | AON7407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 450.42 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7407_AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON7407 20V P-Channel MOSFET General.
| Part number | AON7407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 450.42 KB |
| Description | 20V P-Channel MOSFET |
| Datasheet | AON7407_AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) 100% UIS Tested 100% Rg Tested -20V -40A < 9.5mW < 12.5mW < 18mW DFN 3x3_EP Top View Bottom View Pin 1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -20 ±8 -40 -29 -100 -14.5 -11.5 -40 80 29 12 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 30 60 Maximum Junction-to-Case Steady-State RqJC 3.5 Max 40 75 4.2 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: October 2023 www.aosmd.com Page 1 of 6 AON7407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -20 V IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±8V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -0.3 -0.55 -0.9 V ID(ON) On state drain current VGS=-4.5V, VDS=-5V -100 A RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V, ID=-14A VGS=-2.5V, ID=-13A TJ=125°C 7.6 9.5 10.5 13.5 mW 9.3 12.5 mW VGS=-1.8V, ID=-11A 11.4 18 mW gFS Forw
Compare AON7407 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| AON7400 | Field Effect Transistor |
| AON7400A | 30V N-Channel MOSFET |
| AON7401 | 30V P-Channel MOSFET |
| AON7402 | 30V N-Channel MOSFET |
| AON7403 | 30V P-Channel MOSFET |
| AON7404 | 20V N-Channel MOSFET |
| AON7404G | 20V N-Channel MOSFET |
| AON7405 | 30V P-Channel MOSFET |
| AON7406 | 30V N-Channel MOSFET |
| AON7408 | 30V N-Channel MOSFET |