Datasheet Details
| Part number | AON7408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.58 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON7408 Download (PDF) |
|
|
Overview: AON7408 30V N-Channel MOSFET General.
| Part number | AON7408 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 385.58 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON7408 Download (PDF) |
|
|
|
• The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in general purpose applications.
• RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 30V 18A < 20mW < 32mW DFN 3x3 EP Top View Bottom View Top View S1 S2 S3 G4 8D 7D 6D 5D G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current B TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current A TA=25°C TA=70°C IDSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 18 11.5 64 10 8 11 4.5 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A Steady-State RqJA 25 62 Maximum Junction-to-Case B Steady-State RqJC 8.8 Max 40 75 11 D S Units V V A A W W °C Units °C/W °C/W °C/W Rev.9.1: October 2023 www.aosmd.com Page 1 of 6 AON7408 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS，ID=250mA 1.5 On state drain current VGS=10V, VDS=5V 64 VGS=10V, ID=10A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current V 1 5 mA ±100 nA 2.1 2.6 V A 15.3 20 23.3 30 mW 22.7 32 mW 17 S 0.75 1 V 12 A DYNAMIC PARAMETERS Ciss Input
Compare AON7408 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| AON7400 | Field Effect Transistor |
| AON7400A | 30V N-Channel MOSFET |
| AON7401 | 30V P-Channel MOSFET |
| AON7402 | 30V N-Channel MOSFET |
| AON7403 | 30V P-Channel MOSFET |
| AON7404 | 20V N-Channel MOSFET |
| AON7404G | 20V N-Channel MOSFET |
| AON7405 | 30V P-Channel MOSFET |
| AON7406 | 30V N-Channel MOSFET |
| AON7407 | 20V P-Channel MOSFET |