Datasheet Details
| Part number | AONS32100 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.81 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet |
 AONS32100 Datasheet
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| Part number | AONS32100 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 324.81 KB |
| Description | 25V N-Channel MOSFET |
| Datasheet |
AONS32100 Datasheet
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • High performance ORing, Efuse • Ultra high current battery charge/discharge Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 25V 400A < 0.73mΩ < 1.08mΩ DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS32100 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C G TC=100°C ID Pulsed Drain Current C (≤10μS) IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 25 ±20 400 370 1500 73 60 80 320 400 160 6.2 4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 0.26 Max 20 50 0.31 Units °C/W °C/W °C/W Rev.3.0: May 2019 www.aosmd.com Page 1 of 6 AONS32100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 25 IDSS Zero Gate Voltage Drain Current VDS=25V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 0.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Curren
AONS32100 25V N-Channel MOSFET General.
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|---|---|
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