Datasheet Details
| Part number | AONS32106 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 625.60 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet |
 AONS32106 Datasheet
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| Part number | AONS32106 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 625.60 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet |
AONS32106 Datasheet
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• Trench Power MOSFET technology • Low RDS(ON) • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V) 20V 20A < 5.3mΩ < 6.8mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Battery protection switch 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS32106 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current G TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 20 20 80 20 20 40 80 36 14 5 3.2 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 20 45 Maximum Junction-to-Case Steady-State RqJC 2.8 Max 25 55 3.4 Units °C/W °C/W °C/W Rev.1.0: January 2020 www.aosmd.com Page 1 of 6 AONS32106 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS, ID=250mA VGS=4.5V, ID=20A Static Drain-Source On-Resistance VGS=2.5V, ID=18A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Cap
AONS32106 20V N-Channel MOSFET General.
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|---|---|
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| AONS32303 | 30V N-Channel MOSFET |
| AONS32304 | 30V N-Channel MOSFET |
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