Datasheet Details
| Part number | AONS34304C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.55 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS34304C Download (PDF) |
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Overview: AONS34304C 30V N-Channel MOSFET General.
| Part number | AONS34304C |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 309.55 KB |
| Description | 30V N-Channel MOSFET |
| Download | AONS34304C Download (PDF) |
|
|
|
• Latest Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6.5V) 30V 440A < 0.68mΩ < 0.75mΩ Application • High performance ORing, Efuse • Ultra high current battery charge/discharge 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Bottom View Top View PIN1 PIN1 S1 S2 S3 G4 8D 7D 6D 5D G S Orderable Part Number AONS34304C Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 440 280 1760 84 67 80 160 208 83 7.3 4.7 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.46 Max 17 50 0.6 Units °C/W °C/W °C/W Rev.1.2: August 2025 www.aosmd.com Page 1 of 6 AONS34304C Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuo
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|---|---|
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