Datasheet Details
| Part number | AONS66814 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.80 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
 AONS66814 Datasheet
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| Part number | AONS66814 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 431.80 KB |
| Description | 80V N-Channel MOSFET |
| Datasheet |
AONS66814 Datasheet
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• AlphaSGT2TM N-Channel Power MOSFET • Low RDS(ON) • Low Gate Charge • Enhanced body diode performacne • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=8V) 80V 220A < 2.4mΩ < 2.8mΩ Applications • DC Motor Drive and BMS industrial application.
• Synchronous Rectification in DC/DC and AC/DC Converters 100% UIS Tested 100% Rg Tested Max Tj=175°C DFN5X6 D Top View Bottom View Top View PIN1 S1 S2 S3 G4 PIN1 8D 7D 6D 5 DG S Orderable Part Number AONS66814 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C Power Dissipation B Power Dissipation A TC=25°C TC=100°C TA=25°C TA=70°C VDS VGS ID IDM IDSM IAS EAS PD PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±20 220 155 880 41 34 67 224 250 125 8.8 6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14 40 0.45 Max 17 50 0.6 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.2.1: January 2025 www.aosmd.com Page 1 of 6 AONS66814 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.6 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=8V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, V
AONS66814 80V N-Channel AlphaSGT2 TM General.
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|---|---|
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