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AOSS21319C
30V P-Channel MOSFET
General Description
• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant
Applications
• This device is ideal for Load Switch
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
ESD protection
-30V -2.8A < 100mΩ < 150mΩ
SOT23
Top View
Bottom View
D
D
G
S
G
S
Orderable Part Number
AOSS21319C
Package Type
SOT23-3
Form
Minimum Order Quantity
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25°C TA=70°C
ID
Pulsed Drain Current C
IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±20 -2.