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AOSS21319C - 30V P-Channel MOSFET

General Description

Trench Power MOSFET technology Low RDS(ON) Low Gate Charge RoHS and Halogen-Free Compliant Applications This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection -30V -2.8A

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AOSS21319C 30V P-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • This device is ideal for Load Switch Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) ESD protection -30V -2.8A < 100mΩ < 150mΩ SOT23 Top View Bottom View D D G S G S Orderable Part Number AOSS21319C Package Type SOT23-3 Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -2.