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AOT080A60L - 600V N-Channel Power Transistor

General Description

Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse RreocHoSve2ry.0 and Halogen-Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ E

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AOT080A60L 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse • RreocHoSve2ry.0 and Halogen-Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 140A < 0.08Ω 70nC 9.