Datasheet Details
| Part number | AOT11N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 541.91 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet | AOT11N60-AlphaOmegaSemiconductors.pdf |
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Overview: AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General.
| Part number | AOT11N60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 541.91 KB |
| Description | 11A N-Channel MOSFET |
| Datasheet | AOT11N60-AlphaOmegaSemiconductors.pdf |
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The AOT11N60 & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V@150℃ 11A < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N60L & AOTF11N60L Top View TO-220 TO-220F D G D S AOTF11N60 G D S S AOT11N60 G C unless otherwise noted Absolute Maximum Ratings TA=25° AOT11N60 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D C AOTF11N60 600 ±30 11* 8* 39 4.8 345 690 5 50 0.4 -55 to 150 300 AOTF11N60L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS AOT11N60 65 0.5 0.46 272 2.2 11 8 11* 8* A A mJ mJ V/ns W W/ oC ° C ° C AOTF11N60L 65 -3.3 Units ° C/W ° C/W ° C/W 37.9 0.3 AOTF11N60 65 -2.5 Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev 0: Jan 2012 www.aosmd.com Page 1 of 6 AOT11N60/AOTF11N60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistan
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT11N60 | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOT11N60L | 11A N-Channel MOSFET |
| AOT11N70 | 11A N-Channel MOSFET |
| AOT1100L | 100V N-CHANNEL MOSFET |
| AOT11C60 | 11A N-Channel MOSFET |
| AOT11S60 | Power Transistor |
| AOT11S60L | Power Transistor |
| AOT11S65 | Power Transistor |
| AOT11S65L | 650V 11A Power Transistor |
| AOT10B60D | 10A IGBT |
| AOT10B65M1 | 10A Alpha IGBT |