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AOT460 - N-Channel MOSFET

Datasheet Summary

Description

The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in UPS, high current switching applications.

AOT460and AOT460L are electrically identical.

Features

  • VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ,.

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Datasheet Details

Part number AOT460
Manufacturer Alpha & Omega Semiconductors
File Size 182.19 KB
Description N-Channel MOSFET
Datasheet download datasheet AOT460 Datasheet
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Full PDF Text Transcription

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AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
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