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AOT470 - N-Channel MOSFET

General Description

The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 75V 100A < 10.5mΩ 100% UIS Tested 100% Rg Tested Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D D G DS G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.