Datasheet Details
| Part number | AOTF470 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 69.56 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOTF470 Datasheet
|
|
|
General Description
The AOTF470 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Key Features
- VDS (V) = 75V ID= 50 A (VGS= 10V) RDS(ON) < 11.5mΩ (VGS = 10V) D G DS AOTF470 TO-220F G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter M.