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AOTL095A60 Datasheet N-Channel Power Transistor

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology 100% UIS Tested 100% Rg Tested Top View TOLL Bottom View 700V 140A < 0.095Ω 72nC 8.1mJ D PIN1(G) Orderable Part Number AOTL095A60 S K PIN1(G) Package Type TOLL Form Tape &Reel G K S Minimum Order Quantity 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness ID IDM IDSM IAR EAR EAS dv/dt Diode reverse recovery dv/dt VDS=0 to 400V,IF<=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 ±30 35 20 140 5.7 4.6 11 60 480 100 20 250 310 2.5 8.3 5.3 -55 to 150 300 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Case Symbol RqJA RqJC Typical 10 40 0.32 Maximum 15 50 0.4 Units °C/W °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AOTL095A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Break

Overview

AOTL095A60 600V, a MOS5 TM N-Channel Power Transistor General.