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AOTL125A60 Datasheet 600V TOLL

Manufacturer: Alpha & Omega Semiconductors

General Description

• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters Top View TOLL Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 100A < 0.125Ω 39nC 6.3mJ D D PIN1(G) S K Orderable Part Number AOTL125A60 PIN1(G) Package Type TOLL G K S Form Tape & Reel Minimum Order Quantity 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain Current Pulsed Drain Current C TC=25°C TC=100°C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=26A,Tj=25°C VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt Power Dissipation B TC=25°C Derate above 25°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 ±30 28 18 100 5.2 4.2 14.0 98 555 100 20 400 312 2.5 8.3 5.3 -55 to 150 300 Units V V V A A A mJ mJ V/ns V/ns A/us W W/°C W °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Case t ≤ 10s Steady-State Symbol RqJA RqJC Typical 10 40 0.3 Maximum 15 50 0.4 Units °C/W °C/W °C/W Rev.1.1: January 2022 www.aosmd.com Page 1 of 6 AOTL125A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=

Overview

AOTL125A60 600V, a MOS5 TM TOLL for high density, high reliability SMPS.