Datasheet Details
| Part number | AOTL130A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 450.80 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
 AOTL130A60FD Datasheet
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| Part number | AOTL130A60FD |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 450.80 KB |
| Description | N-Channel Power Transistor |
| Datasheet |
AOTL130A60FD Datasheet
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• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PWM stages (LLC, PSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters Top View TOLL 100% UIS Tested 100% Rg Tested 700V 112A < 0.13Ω 48nC 6.8mJ D PIN1(G) S K Orderable Part Number AOTL130A60FD PIN1(G) Package Type TOLL G Form Tape & Reel K S Minimum Order Quantity 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness, VDS=0~400V Diode reverse recovery VDS VGS ID IDM IAR EAR EAS dv/dt VDS=0 to 400V,IF=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 28 17 112 7.9 31 555 100 20 1000 277 2.2 -55 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A,D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State RqJA RqJC Typical 10 40 0.34 Maximum 15 50 0.45 Units V V A A mJ mJ V/ns V/ns A/ns W W/°C °C °C Units °C/W °C/W °C/W Rev.1.0: February 2024 www.aosmd.com Page 1 of 6 AOTL130A60FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=10mA, VGS=0V, TJ=150°C ID=10mA, VGS=0V Zero Ga
AOTL130A60FD 600V, a MOS5 TM N-Channel Power Transistor General.
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