Datasheet Details
| Part number | AOTL42A60E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 448.25 KB |
| Description | N-Channel Power Transistor |
| Download | AOTL42A60E Download (PDF) |
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| Part number | AOTL42A60E |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 448.25 KB |
| Description | N-Channel Power Transistor |
| Download | AOTL42A60E Download (PDF) |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • PFC and PWM stages (LLC, FSFB,TTF) of Server, Telecom, Industrial, UPS, and Solar Inverters Top View TOLL Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 120A < 0.109Ω 58nC 8mJ D PIN1(G) S Orderable Part Number AOTL42A60E K PIN1(G) Package Type TOLL G K S Form Minimum Order Quantity Tape & Reel 2000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Diode reverse recovery VDS=0 to 400V,IF<=30A,Tj=25°C TC=25°C Power Dissipation B Derate above 25°C VDS VGS ID IDM IDSM IAR EAR EAS dv/dt dv/dt di/dt PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 30 22 120 5.4 4.3 17 145 750 100 20 200 367 2.9 8.3 5.3 -55 to 150 300 Units V V A A A mJ mJ V/ns V/ns A/us W W/°C W °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A,D Steady-State Maximum Junction-to-Case Symbol RqJA RqJC Typ 10 40 0.28 Max 15 50 0.34 Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOTL42A60E Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μ
AOTL42A60E 600V, a MOS TM N-Channel Power Transistor General.
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