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AOW125A60 - N-Channel Power Transistor

General Description

Proprietary aMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/

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AOW125A60/AOWF125A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for be...

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OS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom View 700V 100A < 0.125Ω 39nC 6.

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