Datasheet Details
| Part number | AOWF095A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.54 KB |
| Description | 600V N-Channel Power Transistor |
| Download | AOWF095A60 Download (PDF) |
|
|
| Part number | AOWF095A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 454.54 KB |
| Description | 600V N-Channel Power Transistor |
| Download | AOWF095A60 Download (PDF) |
|
|
|
Product Summary • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology 100% UIS Tested 100% Rg Tested TO-262F D Top View Bottom View 700V 152A < 0.095Ω 78nC 7.8mJ G DS S DG G S Orderable Part Number AOWF095A60 Package Type TO262F Form Tube Minimum Order Quantity 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness VDS VGS VGS ID IDM IAR EAR EAS dv/dt Diode reverse recovery dv/dt VDS=0 to 400V,IF<=20A,Tj=25°C di/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Maximum 600 ±20 ±30 38* 24* 152 11 60 480 100 20 500 34.5 0.27 -55 to 150 300 Units V V V A A mJ mJ V/ns V/ns A/us W W/°C °C °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D RqJA Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
Maximum 65 3.6 Units °C/W °C/W Rev.1.1: January 2024 www.aosmd.com Page 1 of 6 AOWF095A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V Zero Gate
AOWF095A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part Number | Description |
|---|---|
| AOWF10N60 | 10A N-Channel MOSFET |
| AOWF10N65 | 10A N-Channel MOSFET |
| AOWF10T60 | 10A N-Channel MOSFET |
| AOWF11C60 | 11A N-Channel MOSFET |
| AOWF11S60 | Power Transistor |
| AOWF11S65 | Power Transistor |
| AOWF125A60 | N-Channel Power Transistor |
| AOWF12N50 | 12A N-Channel MOSFET |
| AOWF12N60 | 12A N-Channel MOSFET |
| AOWF12N65 | 12A N-Channel MOSFET |