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AOWF095A60
600V, a MOS5 TM N-Channel Power Transistor
General Description
Product Summary
• Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI
performance • Enhanced body diode for robustness and fast reverse
recovery
VDS @ Tj,max IDM RDS(ON),max Qg,typ
Eoss @ 400V
Applications
• SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology
100% UIS Tested 100% Rg Tested
TO-262F
D
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700V 152A < 0.095Ω 78nC
7.