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AOWF160A60 - N-Channel Power Transistor

Description

Proprietary αMOS5TM technology Low RDS(ON) Optimized switching parameters for better EMI performance Enhanced body diode for robustness and fast reverse recovery Applications SMPS with PFC, Flyback and LLC topologies Micro inverter with DC/

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AOWF160A60/AOW160A60 600V, a MOS5 TM N-Channel Power Transistor General Description • Proprietary αMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Micro inverter with DC/AC inverter topology Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested TO-262F Top View Bottom View TO-262 Top View Bottom View 700V 96A < 0.16Ω 46nC 4.
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