Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested!
TO-252 D-PAK Top View Bottom View D
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Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current
C C
Maximium 500 ±30 2.8 1.8 9.0 2.0 60 120 5 57 0.45 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ C °C °C
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TC=25°C TC=100°C ID IDM IAR EAR
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Repetitive aval.
D3N50 Datasheet
