Datasheet Details
| Part number | AO4354 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.48 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4354-AlphaOmegaSemiconductors.pdf |
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Overview: AO4354 30V N-Channel AlphaMOS General.
| Part number | AO4354 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.48 KB |
| Description | 30V N-Channel AlphaMOS |
| Datasheet | AO4354-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Application • DC/DC Converters in puting, Servers, and POL • Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested 30V 23A < 3.7mW < 5.3mW Top View D D D D SOIC-8 Bottom View G S S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike 100ns VSPIKE TA=25°C Power Dissipation B TA=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 23 14 174 37 68 36 3.1 1.2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 31 59 Maximum Junction-to-Lead Steady-State RqJL 16 Max 40 75 24 Units V V A A mJ V W °C Units °C/W °C/W °C/W Rev1.0: August 2023 .aosmd.
Page 1 of 5 AO4354 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.2 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 3 3.7 mW 4.1 5 VGS=4.5V, ID=20A 4.1 5.3 mW gFS Forward Transconductance VDS=5V, ID=20A 105 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V IS Maximum Body-Diode Continuous Current 4 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output C
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO4354 | N-Channel MOSFET | VBsemi |
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AO4354 | N-Channel MOSFET | Kexin |
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