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AO4448L Datasheet 80v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4448L 80V N-Channel MOSFET SDMOS TM General.

General Description

The AO4448L is fabricated with SDMOSTM trench technology that bines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 10A < 16mΩ < 20mΩ SOIC-8 D Top View Bottom View D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C ID IDM IAS, IAR EAS, EAR TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±25 10 8 70 45 101 3.1 2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 31 59 Maximum Junction-to-Lead Steady-State RθJL 16 Max 40 75 24 Units V V A A mJ W °C Units °C/W °C/W °C/W Rev 0: December 2009 .aosmd.

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