AO4566 Datasheet | Alpha & Omega Semiconductors

Description - Latest Trench Power Alpha MOS (αMOS LV) technology - Very Low RDS(ON) at 4.5V VGS - Low Gate Charge - High Current Capability - Ro HS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 12A < 11mΩ < 17mΩ Application - DC/DC Converters in puting, Servers, and POL - Isolated DC/DC Converters in Tele and Industrial SOIC-8 Top View D D D D Bottom View 100% UIS Tested 100% Rg Tested Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1m H C VDS Spike Power Dissipation B 100ns TA=25° C TA=70° C TA=25° C TA=70° C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG Maximum 30 ±20 12 9.4 48 15 11 36 2.5 1.6 -55 to 150 Units V V A A m J V W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 42 70 20 Max 50 85 30 Units ° C/W ° C/W ° C/W Rev 0: Aug 2012 .aosmd. Page 1 of 5 Free Datasheet http://../ Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, ID=12A RDS(ON) g FS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=12A IS=1A,VGS=0V TJ=125° C 1.3 1.8 9 12.5 13.5 45 0.72 1 3.5 542 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1 233 31 2 9 VGS=10V, VDS=15V, ID=12A 4.3 2.2 1.7 4 VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω IF=12A, d I/dt=500A/µs 3.5 18 3 9.7 11.5 3 12.2 5.8 Min 30 1 5 ±100 2.3 11 15 17 Typ Max Units V µA n A V mΩ mΩ S V A p F p F p F Ω n C n C n C n C ns ns ns ns ns n C STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body...