Datasheet Summary
July 2003
AO4609 plementary Enhancement Mode Field Effect Transistor
General Description
The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
Features n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = 4.5V) < 260mΩ (VGS = 2.5V)
D2 S2 G2 S1 G1
..
D1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2 S2
G1 S1
SOIC-8 n-channel...