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AO4710 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4710 30V N-Channel MOSFET SRFET TM General.

General Description

SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge.

This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.

Product Summary VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C Pulsed Drain Current B Avalanche Current C Repetitive avalanche energy L=0.3mH C IDSM IDM IAR EAR Power Dissipation TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 12.7 10 60 22 73 3.1 2.0 -55 to 150 SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode Units V V A A A mJ W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 32 60 17 Max 40 75 24 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.

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