Datasheet Details
| Part number | AO4826 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 164.65 KB |
| Description | 60V Dual N-Channel MOSFET |
| Datasheet | AO4826_AlphaOmegaSemiconductors.pdf |
|
|
Overview: AO4826 60V Dual N-Channel MOSFET General.
| Part number | AO4826 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 164.65 KB |
| Description | 60V Dual N-Channel MOSFET |
| Datasheet | AO4826_AlphaOmegaSemiconductors.pdf |
|
|
|
The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS (V) = 60V ID = 6.3A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 6.3 5 40 2 1.28 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 50 73 31 Max 62.5 110 40 D2 S2 Units V V A W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4826 | Dual N-Channel 60V MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| AO4821 | Dual P-Channel MOSFET |
| AO4822 | 30V Dual N-channel MOSFET |
| AO4822A | 30V Dual N-channel MOSFET |
| AO4824 | Dual N-Channel MOSFET |
| AO4824L | 30V Dual N-Channel MOSFET |
| AO4828 | 60V Dual N-Channel MOSFET |
| AO4800 | 30V Dual N-Channel MOSFET |
| AO4800B | 30V Dual N-Channel MOSFET |
| AO4800BL | Dual N-Channel MOSFET |
| AO4801 | Dual P-Channel MOSFET |