AO8832 datasheet by Alpha & Omega Semiconductors.
| Part number | AO8832 |
|---|---|
| Datasheet | AO8832_AlphaOmegaSemiconductors.pdf |
| File Size | 165.34 KB |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
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The AO8832 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its mon-drain configuration. Standard Product AO8832 is Pb-free (meets ROHS & Sony 259 specifications).
View all Alpha & Omega Semiconductors datasheets
| Part Number | Description |
|---|---|
| AO8830 | Dual N-Channel MOSFET |
| AO8801 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8801A | 20V P-Channel MOSFET |
| AO8803 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AO8807 | Dual P-Channel FET |
| AO8808 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO8808A | 20V Dual N-Channel MOSFET |
| AO8810 | 20V Common-Drain Dual N-Channel MOSFET |
| AO8814 | 20V Common-Drain Dual N-Channel MOSFET |
| AO8816 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
