AO8846 Datasheet Common-drain Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: .. AO8846 mon-Drain Dual N-Channel Enhancement Mode Field Effect.

Datasheet Details

Part number	AO8846
Manufacturer	Alpha & Omega Semiconductors
File Size	259.20 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO8846_AlphaOmegaSemiconductors.pdf

The AO8846 uses advanced trench technology to provide excellent RDS(ON), low gate charge.

It is ESD protected.

This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration.

VDS = 20V ID = 7.0A (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.5V) RDS(ON) < 20mΩ (VGS = 4.0V) RDS(ON) < 21mΩ (VGS = 3.1V) RDS(ON) < 22mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.8KΩ D1 D2 G2 1.8KΩ S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Steady State 20 ±8 5.7 4.

Brand Logo	Part Number	Description	Manufacturer
	AO8846	Dual N-Channel MOSFET	VBsemi

Part Number	Description
AO8801	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8801A	20V P-Channel MOSFET
AO8803	Dual P-Channel Enhancement Mode Field Effect Transistor
AO8807	Dual P-Channel FET
AO8808	Dual N-Channel Enhancement Mode Field Effect Transistor
AO8808A	20V Dual N-Channel MOSFET
AO8810	20V Common-Drain Dual N-Channel MOSFET
AO8814	20V Common-Drain Dual N-Channel MOSFET
AO8816	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AO8818	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor