Datasheet Summary
AOT282L/AOB282L
80V N-Channel MOSFET
General Description
The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 80V 105A < 3.5mΩ < 5.2mΩ (< 3.2mΩ ) (< 4.9mΩ ∗)
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100% UIS Tested 100% Rg Tested
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