AOB600A70FL
Description
Product Summary
- Proprietary a MOS5TM technology
- Low RDS(ON)
- Optimized switching parameters for better EMI performance
- Enhanced body diode for robustness and fast reverse recovery
VDS @ Tj,max IDM RDS(ON),max Qg,typ
Eoss @ 400V
Applications
- Flyback for SMPS
- Charger ,PD Adapter, TV, lighting.
100% UIS Tested 100% Rg Tested
Top View D
TO-263 D2PAK
Bottom View
800V 34A < 0.6Ω 14.5n C 1.9m J
Orderable Part Number
Package Type
TO263
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C L=1m H
Repetitive avalanche energy C
Single pulsed avalanche energy G
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
IDM IAR EAR EAS dv/dt
TC=25°C Power Dissipation B Derate above 25°C
Junction and Storage Temperature...
