Datasheet Details
| Part number | AOC2401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOC2401-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AOC2401 30V P-Channel MOSFET General.
| Part number | AOC2401 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 243.91 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOC2401-AlphaOmegaSemiconductors.pdf |
|
|
|
The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -30V -3A < 41mΩ < 47mΩ < 58mΩ HBM Class 2 MCSP 1.57x1.57_4 Top View Bottom View Top View Pin1(G) Bottom View 32 DD S 4 G 1 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Source Current (DC) Note1 Source Current (Pulse) Note2 Power Dissipation Note1 TA=25°C TA=25°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -3 -45 0.55 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Note 1.
Mounted on minimum pad PCB Note 2.
| Part Number | Description |
|---|---|
| AOC2411 | 30V P-Channel MOSFET |
| AOC2412 | 20V N-Channel MOSFET |
| AOC2413 | 8V P-Channel MOSFET |
| AOC2414 | 8V N-Channel MOSFET |
| AOC2415 | 20V P-Channel MOSFET |
| AOC2417 | 20V P-Channel MOSFET |
| AOC2421 | 8V P-Channel MOSFET |
| AOC2422 | 8V N-Channel MOSFET |
| AOC2423 | 20V P-Channel MOSFET |
| AOC2800 | Common-Drain Dual N-Channel MOSFET |