Datasheet Summary
600V, a MOSE TM N-Channel Power Transistor
General Description
- Excellent RDS(ON)- A
- Optimized switching parameters for better EMI performance
- Enhanced body diode for robustness and fast reverse recovery
- RoHS 2.0 and Halogen-Free pliant
Applications
- SMPS Hard-switching PFC,Resonant PFC/LLC/ZVS FB topologies
- Tele,Server,ATX and Solar Inverter,Motor Drive
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
700V 45A < 0.21Ω 22nC
4.1mJ
TO-252
DPAK
Top View
Bottom View
Orderable Part Number
Package...