Datasheet Details
| Part number | AOD240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 493.74 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD240_AlphaOmegaSemiconductors.pdf |
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Overview: AOD240 40V N-Channel MOSFET General.
| Part number | AOD240 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 493.74 KB |
| Description | 40V N-Channel MOSFET |
| Datasheet | AOD240_AlphaOmegaSemiconductors.pdf |
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The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low bination of RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 70A < 3mW < 3.9mW TO252 DPAK D Top View Bottom View D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG G S Maximum 40 ±20 70 55 300 23 18 68 231 150 75 2.7 1.7 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14.2 39 0.8 Max 17 47 1 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD240 | N-Channel MOSFET | INCHANGE |
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AOD240 | N-Channel MOSFET | Freescale |
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AOD240 | N-Channel MOSFET | VBsemi |
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