Datasheet Details
| Part number | AOD2904 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 260.05 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD2904-AlphaOmegaSemiconductors.pdf |
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Overview: AOD2904 100V N-Channel MOSFET General.
| Part number | AOD2904 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 260.05 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD2904-AlphaOmegaSemiconductors.pdf |
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100V 70A < 10mΩ < 12.5mΩ Applications • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D Orderable Part Number AOD2904 S G S Package Type TO-252 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G G S Form Tape & Reel Minimum Order Quantity 2500 Maximum 100 ±20 70 53 180 10.5 8.5 40 80 120 125 62.5 2.5 1.6 -55 to 175 Units V V A A A mJ V W W °C Typ Max Units 15 20 °C/W 40 50 °C/W 1.0 1.2 °C/W Rev.1.0: April 2015 .aosmd.
Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=100V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ci
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD2904 | N-Channel MOSFET | INCHANGE |
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