Datasheet Details
| Part number | AOD380A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 424.75 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOD380A60-AlphaOmegaSemiconductors.pdf |
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Overview: AOD380A60 600V, a MOS5 TM N-Channel Power Transistor General.
| Part number | AOD380A60 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 424.75 KB |
| Description | 600V N-Channel Power Transistor |
| Datasheet | AOD380A60-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • SMPS with PFC, Flyback and LLC topologies • Silver ATX ,adapter, TV, lighting, Server power Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 44A < 0.38Ω 18nC 2.6mJ TO252 Top View D Bottom View D D S D S G AOD380A60 DS GG S Orderable Part Number AOD380A60 Package Type TO252 D G Form Tape&Reel S Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G (TJ=25°C, VGS=10V, IL=2Apk, L=105mH, RGS=25W) MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±20 ±30 11 7.2 44 2.5 3.1 210 100 20 125 1.0 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RqJA RqCS RqJC Maximum 55 0.5 1 Units °C/W °C/W °C/W Rev.2.0: December 2020 .aosmd.
Page 1 of 6 AOD380A60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=12
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