Datasheet Details
| Part number | AOD403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 271.75 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOD403_AlphaOmegaSemiconductors.pdf |
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Overview: AOD403/AOI403 30V P-Channel MOSFET General.
| Part number | AOD403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 271.75 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AOD403_AlphaOmegaSemiconductors.pdf |
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Product Summary The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.
With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS ID (at VGS= -20V) RDS(ON) (at VGS= -20V) RDS(ON) (at VGS = -10V) 100% UIS Tested 100% Rg Tested -30V -70A < 6.2mW < 8mW (< 6.7mW*) (< 8.5mW*) TopView TO252 DPAK Bottom View Top View TO-251A IPAK Bottom View D D DS G DG S G DS G G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM -70 -55 -200 Continuous Drain Current TA=25°C TA=70°C IDSM -15 -12 Avalanche Current C IAS, IAR -50 Avalanche energy L=0.1mH C EAS, EAR 125 TC=25°C Power Dissipation B TC=100°C PD 90 45 TA=25°C Power Dissipation A TA=70°C PDSM 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 16 41 Maximum Junction-to-Case Steady-State RqJC 0.9 Max 20 50 1.6 * package TO251A D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.10.1: January 2024 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD403 | P-Channel MOSFET | VBsemi |
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AOD403 | P-Channel MOSFET | INCHANGE |
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