AOD4120 Datasheet | Alpha & Omega Semiconductors

Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical. TO-252 D-PAK Features VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested Top View Drain Connected to Tab .. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Maximum 20 ±16 25 23 75 13 25 33 16.7 2.5 1.7 -55 to 175 Units V V A A m J W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG Repetitive avalanche energy L=0.3m H TC=25°C Power Dissipation B Power Dissipation TC=100°C TA=25°C TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 40 3.6 Max 25 50 4.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250u A, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±16V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=10A VGS=2.5V, ID=4A g FS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V G Maximum Body-Diode Continuous Current 0.6 75 14 21 20 57 19 0.77 1 30 900 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 162 105 1.8 15 VGS=10V, VDS=10V, ID=20A 7.2 1.8 2.8 4.5 VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω IF=20A, d I/dt=100A/µs 9.2 18.7 3.3 18 9.5 2.7...