Download AOD417 Datasheet PDF
Alpha & Omega Semiconductors
AOD417
AOD417 is P-Channel MOSFET manufactured by Alpha & Omega Semiconductors.
Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -Ro HS pliant -Halogen Free- Features VDS (V) = -30V ID = -25A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 55mΩ (VGS = -4.5V) 100% UIS Tested! 100% Rg Tested! Top View D TO-252 D-PAK Bottom View Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C G Current B,G TA=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.3m H C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -25 -20 -60 -14 30 50 25 2.5 1.6 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16.7 40...