AOD422 Datasheet | Alpha & Omega Semiconductors

Description The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AOD422L (Green Product) is offered in a Lead Free package. Features VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK Top View Drain Connected to Tab Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1m H TC=25°C Power Dissipation Maximum 20 ±8 10 10 30 15 26 50 20 2.5 1.6 -55 to 150 Units V V A A m J W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=100°C TA=25°C TA=70°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 16.7 40 1.9 Max 25 50 2.5 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AOD422, AOD422L Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250µA, VGS=0V VDS=16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=10A TJ=125°C VGS=2.5V, ID=8A 0.4 30 18 25 21 26 30 0.76 22 31 26 34 1 10 0.6 Min 20 1 5 ±1 ±10 1 Typ Max Units V µA µA µA V A mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C Static Drain-Source On-Resistance g FS VSD IS VGS=1.8V, ID=5A Forward Transconductance VDS=5V, ID=10A Diode Forward Voltage IS=1A,VGS=0V G Maximum...