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AOD422 Datasheet N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: .. Rev 2: Sep 2004 AOD422, AOD422L (Green Product) N-Channel Enhancement Mode Field Effect.

General Description

The AOD422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Key Features

  • VDS (V) = 20V ID = 10 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B C Maximum 20 ±8 10 10 30 15 26 50 20 2.5 1.6 -55.

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