Datasheet Details
| Part number | AOD4504 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 281.62 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet | AOD4504-AlphaOmegaSemiconductors.pdf |
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Overview: AOD4504 200V N-Channel MOSFET General.
| Part number | AOD4504 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 281.62 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet | AOD4504-AlphaOmegaSemiconductors.pdf |
|
|
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The AOD4504 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 200V 6A < 400mΩ TO252 DPAK D Top View Bottom View D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=3.9mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G S Maximum 200 ±20 6 4.5 10 1.5 1 3 18 42.5 21 2.5 1.6 -55 to 175 Typ Max 15 20 41 50 2.9 3.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: July 2012 .aosmd.
Page 1 of 6 AOD4504 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 200 V IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 2.8 3.7 V ID(ON) On state drain current VGS=10V, VDS=5V 10 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3A TJ=125°C 333 400 mΩ 666 800 gFS Forward Transconductance VDS=5V, ID=3A 7 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V IS Maximum Body-Diode Continuous Current 6 A DY
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD4504 | N-Channel MOSFET | INCHANGE |
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