Datasheet Details
| Part number | AOD450A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 548.02 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOD450A70-AlphaOmegaSemiconductors.pdf |
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Overview: AOD450A70/AOI450A70 700V, aMOS5 TM N-Channel Power Transistor.
| Part number | AOD450A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 548.02 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOD450A70-AlphaOmegaSemiconductors.pdf |
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|
• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox,Server,Gaming Power Supply,Industrial, TV,Lighting 100% UIS Tested 100% Rg Tested 800V 44A < 0.45Ω 20nC 2.5mJ TO-252 DPAK TO-251A IPAK D TopView D Bottom View D Top View D Bottom View D DS DG G S AOD450A70 GD S AOI450A70 DG S G S Orderable Part Number AOD450A70 AOI450A70 Package Type TO252 TO251A Form Tape & Reel Tube Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage (dynamic) AC( f>1Hz) Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VGS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 ±30 11 6.8 44 2.5 3.1 30 100 20 125 1.0 -55 to 150 300 Units V V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 0.8 Maximum 55 0.5 1 Units °C/W °C/W °C/W Rev.1.0: November 2020 .aosmd.
Page 1 of 6 AOD450A70/AOI450A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Breakdown Voltage Temp
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