Datasheet Details
| Part number | AOD482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.58 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD482_AlphaOmegaSemiconductors.pdf |
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Overview: AOD482/AOI482 100V N-Channel MOSFET General.
| Part number | AOD482 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 394.58 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOD482_AlphaOmegaSemiconductors.pdf |
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The AOD482/AOI482 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 100V 32A < 37mW < 42mW TO252 DPAK TO-251A IPAK D TopView Bottom View Top View Bottom View D D DS G DG S S D G G G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current TC=25°C TC=100°C ID 32 22 Pulsed Drain Current C IDM 70 Continuous Drain Current TA=25°C TA=70°C IDSM 5 4 Avalanche Current C IAS, IAR 35 Avalanche energy L=0.1mH C EAS, EAR 61 TC=25°C Power Dissipation B TC=100°C PD 100 50 TA=25°C Power Dissipation A TA=70°C PDSM 2.5 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 14.2 39 0.8 Max 20 50 1.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2.1 : October 2023 .aosmd.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD482 | N-Channel MOSFET | INCHANGE |
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|---|---|
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