Datasheet Details
| Part number | AOD66920 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 434.06 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD66920-AlphaOmegaSemiconductors.pdf |
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Overview: AOD66920 100V N-Channel AlphaSGT TM General.
| Part number | AOD66920 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 434.06 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOD66920-AlphaOmegaSemiconductors.pdf |
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic Level Driving • Excellent QG x RDS(ON) Product (FOM) • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 70A < 8.2mΩ < 10.7mΩ Applications • High Frequency Switching and Synchronous Rectification 100% UIS Tested 100% Rg Tested TopView TO252 DPAK Bottom View D D D S G Orderable Part Number AOD66920 D G S Package Type TO-252 G S Form Tape & Reel Minimum Order Quantity 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 70 46.5 180 19.5 15.5 38 72 89 35.5 6.2 4.0 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 15 40 1.15 Max 20 50 1.4 Units °C/W °C/W °C/W Rev.2.0: June 2019 .aosmd.
Page 1 of 6 AOD66920 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250mA, VGS=0V VDS=100V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VGS=4.5V, ID=20A VDS=5V, ID=20A IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Cap
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