Datasheet Details
| Part number | AOE6930 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 556.21 KB |
| Description | 30V Dual Asymmetric N-Channel FET |
| Datasheet | AOE6930-AlphaOmegaSemiconductors.pdf |
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Overview: AOE6930 30V Dual Asymmetric N-Channel XSPairFET TM General.
| Part number | AOE6930 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 556.21 KB |
| Description | 30V Dual Asymmetric N-Channel FET |
| Datasheet | AOE6930-AlphaOmegaSemiconductors.pdf |
|
|
|
• Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.3mΩ < 0.83mΩ < 7.0mΩ < 1.05mΩ Applications • DC/DC Converters in puting, Servers, and POL • Non-Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X6E Bottom View Top View Bottom View D2/S1 G2 G1 1 8 G2 G2 8 S2 PIN1 S1/D2 2 Q1 S2 Q2 7 D2/S1 D2/S1 7 D1 G1 D1 3 S1/D2 D1 6 D2/S1 D2/S1 6 PIN D1 D1 4 5 D2/S1 D2/S1 5 1 G1 2 S1/D2 S2 D1 3 D1 4 D1 Orderable Part Number AOE6930 Package Type DFN 5x6E Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.01mH C VDS 30 30 VGS ±20 ±12 22 85 ID 22 85 IDM 88 340 22 G 60 IDSM 19 48 IAS 50 80 EAS 13 32 VDS Spike Power Dissipation B Power Dissipation A 10μs TC=25°C TC=100°C TA=25°C TA=70°C VSPIKE 36 36 24 75 PD 9.6 30 4.1 5 PDSM 2.6 3.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1.
t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 23 20 30 25 45 40 60 50 4 1.25 5.2 1.65 Units °C/W °C/W °C/W Rev.2.1: August 2023 .aosmd.
Page 1 of 10 AOE6930 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Break
| Part Number | Description |
|---|---|
| AOE6932 | 30V Dual Asymmetric N-Channel MOSFET |
| AOE6936 | 30V Dual Asymmetric N-Channel MOSFET |
| AOE66410 | 40V N-Channel AlphaSGT |