Datasheet Details
| Part number | AOE6936 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 485.66 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AOE6936-AlphaOmegaSemiconductors.pdf |
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Overview: AOE6936 30V Dual Asymmetric N-Channel MOSFET General.
| Part number | AOE6936 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 485.66 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AOE6936-AlphaOmegaSemiconductors.pdf |
|
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• Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 55A < 5mΩ < 8mΩ Q2 30V 85A < 2mΩ < 3mΩ Applications • DC/DC Converters in puting, Servers, and POL • Non-Isolated DC/DC Converters in Tele and Industrial 100% UIS Tested 100% Rg Tested Top View PIN1 DFN 5X6E Bottom View D2/S1 G2 G1 1 S2 PIN1 S1/D2 2 Q1 D1 G1 S1/D2 D1 3 D1 D1 4 Top View S2 D1 8 G2 Q2 7 D2/S1 6 D2/S1 5 D2/S1 G2 8 D2/S1 7 D2/S1 6 D2/S1 5 Bottom View 1 G1 2 S1/D2 S2 D1 3 D1 4 D1 Orderable Part Number AOE6936 Package Type DFN 5x6E Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B Power Dissipation A 10µs TC=25°C TC=100°C TA=25°C TA=70°C VSPIKE PD PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 30 ±20 ±20 55 85 35 67 120 208 21 32 16 25 60 80 18 32 36 36 24 39 9.6 15 3.5 3.5 2.2 2.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1.
t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 25 50 4 Typ Q2 25 50 2.4 Max Q1 35 65 5.2 Max Q2 35 65 3.2 Units °C/W °C/W °C/W Rev.2.0 : July 2016 .aosmd.
Page 1 of 10 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate V
| Part Number | Description |
|---|---|
| AOE6930 | 30V Dual Asymmetric N-Channel FET |
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| AOE66410 | 40V N-Channel AlphaSGT |